| PART |
Description |
Maker |
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
| IRFE210 JANTXV2N6784U JANTX2N6784U |
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package 200伏单N沟道高可靠性的18 MOSFET的引脚LCC封装
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?TRANSISTORS SURFACE MOUNT (LCC-18)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R剖TRANSISTORS SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor
HARRIS[Harris Corporation]
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SFF23N60S1 SFF23N60S2 FT0029B FT0029B-15 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXFH120N25X3 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP130N065T2 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
